Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy
نویسندگان
چکیده
by molecular beam epitaxy J. Ibáñez, S. Hernández, E. Alarcón-Lladó, R. Cuscó, L. Artús, S. V. Novikov, C. T. Foxon, and E. Calleja Institut Jaume Almera, Consell Superior d’Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n, 08028 Barcelona, Catalonia, Spain School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom ISOM-Departamento Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica, 28040 Madrid, Spain
منابع مشابه
Structural characterization of non-polar (112 0) and semi-polar (1126) GaN films grown on r-plane sapphire
Thick GaN films, with (1120) or (1126) planes parallel to the r-plane of sapphire, were grown by molecular beam epitaxy using AlN or GaN buffer layers. Characterization by transmission electron microscopy revealed a high density of basal-plane stacking faults (BSFs) in the (1120) non-polar GaN (a-GaN) films. {1120} and {1010} prismatic-plane and {1102} pyramidal-plane stacking faults (SFs) doma...
متن کاملMicrostructure of low temperature grown AlN thin films on Si„111..
AlN thin films were grown on HF-etched Si~111! substrates at 400– 600 °C by plasma source molecular beam epitaxy. Reflection high energy electron diffraction and transmission electron microscopy studies show that AlN films grown at 400 °C form an initial amorphous region at the interface, followed by c-axis oriented columnar grains with slightly different tilts and twists. AlN films grown at 60...
متن کاملMigration Enhanced Metalorganic Chemical Vapor Deposition of AlN/GaN/InN based heterostructures
We applied a new Migration Enhanced Metalorganic Chemical Vapor Deposition (MEMOCVD) epitaxial technique for growing AlN/GaN/InN epitaxial films and heterostructure layers on 2”, 3” and 4” substrates. The growth of the AlN/GaN/InN layers was carried out using controlled precursor pulsed flows to achieve accurate thickness control over large area substrates. This technique bridges the gap betwee...
متن کاملInfrared Reflectivity Spectroscopy of Optical Phonons in Short-period AlGaN/GaN Superlattices
GaN and AlN compounds have been proven useful in wide bandgap microelectronics and optoelectronics. Also properties of bulk GaN and AlN have been studied extensively. However, many characteristics of AlGaN/GaN superlattices are not well known. In particular, the properties of phonons have not been determined. In order to determine phonon properties, this study measured infrared reflectivity spe...
متن کاملCompositional modulation and optical emission in AlGaN epitaxial films
Compositional, structural, and optical properties of molecular-beam epitaxy grown AlxGa1−xN films were characterized by transmission electron microscopy TEM , x-ray diffraction, and cathodoluminescence spectroscopy. Spontaneous modulation, phase separation, and band gap reductions were observed to vary systematically with AlN mole fraction across the full alloy series. At low AlN mole fraction ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2008